IMPROVED SURFACE QUALITY OF SOLUTION GROWN GAAS AND PB1-XSNXTE EPITAXIAL LAYERS - NEW TECHNIQUE

被引：46

作者：

LONGO, JT

HARRIS, JS

CHU, JC

GERTNER, ER

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1972年 / 15卷 / 02期

关键词：

D O I：

10.1016/0022-0248(72)90131-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：107 / &

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