TEM STUDY OF THE DISORDER ORDER PEROVSKITE, PB(IN1/2NB1/2)O3

被引：70

作者：

RANDALL, CA

BARBER, DJ

GROVES, P

WHATMORE, RW

机构：

[1] UNIV OXFORD, CLARENDON LAB, OXFORD, ENGLAND

[2] UNIV ESSEX, DEPT PHYS, COLCHESTER CO4 3SQ, ESSEX, ENGLAND

[3] ALLEN CLARK RES CTR, TOWCESTER, ENGLAND

来源：

JOURNAL OF MATERIALS SCIENCE | 1988年 / 23卷 / 10期

关键词：

Dielectric Properties - Microscopic Examination--Transmission Electron Microscopy;

D O I：

10.1007/BF00540513

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A transmission electron microscopy study of the order-disorder perovskite Pb(In1/2Nb1/2)O3 (PIN) has shown that its microstructures are dependent on the In:Nb B-site cation distribution. In disordered PIN the dielectric properties are those of a relaxor ferroelectric. Lowering the temperature of disordered PIN by means of a liqud nitrogen cooled stage has been found to stabilize polar ferroelectric micro-domains, 20 to 30 nm in size. On increasing the long-range order of the B-site cations to give ordered domains >80 nm in size, an antiferroelectric phase develops that is isostructural with the antiferroelectric perovskite, PbZrO3. Coexisting antiferroelectric and non-antiferroelectric regions have been observed in partially ordered PIN.

引用

页码：3678 / 3682

页数：5