TRANSIT-TIME OSCILLATOR WITH VELOCITY-LIMITED INJECTION

被引：15

作者：

WRIGHT, GT

机构：

来源：

关键词：

D O I：

10.1049/el:19710305

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：449 / &

共 9 条

DASCALU, D .

DASCALU, D .

DASCALU, D .

BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (05) :575-&

[4] TRANSIT-TIME EFFECTS IN SEMICONDUCTORS [J].

OKAMOTO, K ;

NISHIZAW.JI .

[5] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J].

READ, WT .

BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02) :401-446

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1954, 33 (04) :799-826

[7] EFFICIENCY OF TRANSISTOR TRANSIT-TIME OSCILLATOR [J].

WRIGHT, GT .

[8] TRANSISTOR TRANSIT-TIME OSCILLATOR [J].

WRIGHT, GT .

YOSHIMURA, H .