OBSERVATION OF THE EFFECT OF TIP ELECTRONIC STATES ON TUNNEL SPECTRA ACQUIRED WITH THE SCANNING TUNNELING MICROSCOPE

被引:35
作者
KLITSNER, T [1 ]
BECKER, RS [1 ]
VICKERS, JS [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源
PHYSICAL REVIEW B | 1990年 / 41卷 / 06期
关键词
D O I
10.1103/PhysRevB.41.3837
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have investigated the effect of electronic states in the tip of a scanning tunneling microscope on measured tunnel-junction spectra by obtaining spectroscopic data with a tunneling tip terminated by two closely spaced microtips. The tip was such that the two microtips were approximately 9 A apart, one of which was about 0.5 A closer to the surface than the other. When single atomic-size protrusions were imaged, they appeared doubled, and separate spectroscopic data could then be obtained over the same point with each microtip. Differences in the current-voltage characteristics obtained with each microtip suggest that one of the microtips possessed a strong electronic feature at about 1.4 eV above the Fermi energy. The data show the strong effect tip states can have on the measured occupied-state density, while having relatively little effect on the measured unoccupied-state density. © 1990 The American Physical Society.
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页码:3837 / 3840
页数:4
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