FIELD-EFFECT TRANSISTOR WITH A CONDUCTING POLYMER FILM

被引：43

作者：

TSUMURA, A

FUCHIGAMI, H

KOEZUKA, H

机构：

[1] Mitsubishi Electric Corporation, Materials and Electronic Devices Laboratory 1-1, Amagasaki, Hyogo, 661

来源：

SYNTHETIC METALS | 1991年 / 41卷 / 03期

关键词：

D O I：

10.1016/0379-6779(91)91583-V

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spin-coated conducting polymer films of poly(3-hexylthiophene) (PHT) and poly(2,5-thienylene vinylene) (PTV) have been demonstrated to be useful in a field-effect transistor (FET) as a semiconducting layer. The device with a doped PHT film shows enhance-type FET characteristics although they are unstable. On the other hand, the one with a non-doped PTV film shows very stable and excellent FET characteristics with large source current.

引用

页码：1181 / 1184

页数：4

共 7 条

[1] FIELD-EFFECT TRANSISTOR WITH POLYTHIOPHENE THIN-FILM
KOEZUKA, H
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TSUMURA, A
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[7] MACROMOLECULAR ELECTRONIC DEVICE - FIELD-EFFECT TRANSISTOR WITH A POLYTHIOPHENE THIN-FILM
TSUMURA, A
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