POLYTHIOPHENE FIELD-EFFECT TRANSISTOR - ITS CHARACTERISTICS AND OPERATION MECHANISM

被引：152

作者：

TSUMURA, A

KOEZUKA, H

ANDO, T

机构：

[1] Mitsubishi Electric Corp, Amagasaki, Jpn, Mitsubishi Electric Corp, Amagasaki, Jpn

来源：

SYNTHETIC METALS | 1988年 / 25卷 / 01期

关键词：

BAND STRUCTURE - PLASTICS FILMS - Electric Conductivity - POLYMERS - Electric Conductivity;

D O I：

10.1016/0379-6779(88)90318-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel field-effect transistor (FET) with an electrochemically-polymerized polythiophene thin film as an active p-type semiconductor has been fabricated for the first time. The FET is a normally-off type and the source current (I//s) has been enhanced by a factor of more than 10**3 under applied negative gate biases. The conduction channel has been shown to be due to the accumulation of majority positive carriers. It has also been made clear that the electrical conductivity and the thickness of the polythiophene film have a crucial effect on the FET characteristics. The operation mechanism for the FET has been discussed in detail.

引用

页码：11 / 23

页数：13

共 17 条

[1]

Bard A. J., 1980, ELECTROCHEMICAL METH, P633

[2] SINGLE ELECTRODE-POTENTIALS RELATED TO FLAT-BAND VOLTAGE MEASUREMENTS ON EOS AND MOS STRUCTURES [J].