STACKING-FAULTS AND SUBSTRUCTURE IN GAAS-(GA,AL)AS HETERO-EPITAXIAL LAYERS .1. ORIGIN AND ELIMINATION

被引：17

作者：

DUTT, BV

MAHAJAN, S

ROEDEL, RJ

SCHWARTZ, GP

MILLER, DC

DERICK, L

机构：

来源：

关键词：

D O I：

10.1149/1.2127685

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1573 / 1578

页数：6

共 21 条

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