DIRECT OBSERVATION OF DEFECTS IN SI-DOPED AND GE-DOPED GA0.9AL0.1AS EPITAXIAL LAYERS BY TRANSMISSION ELECTRON-MICROSCOPY

被引：19

作者：

KOTANI, T ^{[1
]}

UEDA, O ^{[1
]}

AKITA, K ^{[1
]}

NISHITANI, Y ^{[1
]}

KUSUNOKI, T ^{[1
]}

RYUZAN, O ^{[1
]}

机构：

[1] FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1977年 / 38卷 / 01期

关键词：

D O I：

10.1016/0022-0248(77)90377-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：85 / 92

页数：8

共 13 条

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[2] PREPARATION OF [100]-ORIENTED FOILS OF GAAS FOR TRANSMISSION ELECTRON MICROSCOPY
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[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1980 - &
[3] MEASUREMENT OF MINORITY-CARRIER LIFETIME DURING GRADUAL DEGRADATION OF GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS
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ITO, R
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1974, QE10 (01) : 81 - 84
[4] MULTIPLICATION PROCESSES FOR SLOW MOVING DISLOCATIONS
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[5] ELECTRON MICROSCOPIC IMAGES OF SINGLE AND INTERSECTING STACKING FAULTS IN THICK FOILS .1. SINGLE FAULTS
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[6] DEFECT STRUCTURE OF DEGRADED GAALAS-GAAS DOUBLE HETEROJUNCTION LASERS
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[J]. PHILOSOPHICAL MAGAZINE, 1975, 32 (04): : 745 - 754
[7] NATURE OF DEFECTS IN N+ GALLIUM-ARSENIDE
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DOBSON, PS
[J]. PHILOSOPHICAL MAGAZINE, 1974, 30 (01) : 65 - 73
[8] GROWTH OF DARK LINES FROM CRYSTAL DEFECTS IN GAAS-GAALAS DOUBLE HETEROSTRUCTURE CRYSTALS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (08) : 1321 - 1322
[9] Stacking-Faults in Tellurium-Doped Gallium Arsenide
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Jenkins, G. M.
[J]. JOURNAL OF MATERIALS SCIENCE, 1968, 3 (06) : 584 - 589
[10] ELECTRON-MICROSCOPY STUDY OF EFFECTS OF ANNEALING ON DEFECT STRUCTURE OF HEAVILY SILICON-DOPED GALLIUM-ARSENIDE
NARAYANAN, GH
KACHARE, AH
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02): : 657 - 669

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