GROWTH OF DARK LINES FROM CRYSTAL DEFECTS IN GAAS-GAALAS DOUBLE HETEROSTRUCTURE CRYSTALS

被引：33

作者：

ITO, R ^{[1
]}

NAKASHIMA, H ^{[1
]}

NAKADA, O ^{[1
]}

机构：

[1] HITACHI LTD, CENT RES LAB, KOKUBUNJI 185, TOKYO, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 08期

关键词：

D O I：

10.1143/JJAP.13.1321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1321 / 1322

页数：2

共 8 条

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[7] INTERFACE STRESS OF ALXGA1-XAS-GAAS LAYER STRUCTURES [J].

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[8] DEGRADATION MECHANISM OF (AL.GA) AS DOUBLE-HETEROSTRUCTURE LASER-DIODES [J].

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