DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K

被引：131

作者：

DELOACH, BC ^{[1
]}

HAKKI, BW ^{[1
]}

HARTMAN, RL ^{[1
]}

DASARO, LA ^{[1
]}

机构：

[1] BELL LABS,MURRAY HILL,NJ 07974

来源：

PROCEEDINGS OF THE IEEE | 1973年 / 61卷 / 07期

关键词：

D O I：

10.1109/PROC.1973.9197

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1042 / 1044

页数：3

共 11 条

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[2]

BIARD JR, 1967, GALLIUM ARSENIDE, P113

[3] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J].

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NORTH, JC ;

MILLER, BI ;

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[5]

HAKKI BW, TO BE PUBLISHED

[6]

HARTMAN RD, TO BE PUBLISHED

[7] EVIDENCE FOR ROLE OF CERTAIN METALLURGICAL FLAWS IN ACCELERATING ELECTROLUMINESCENT DIODE DEGRADATION [J].

KRESSEL, H ;

BYER, NE ;

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HAWRYLO, FZ ;

NELSON, H ;

ABRAHAMS, MS ;

MCFARLAN.SH .

METALLURGICAL TRANSACTIONS, 1970, 1 (03) :635-&

[8] PHYSICAL BASIS OF NONCATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS [J].

KRESSEL, H ;

BYER, NE .

PROCEEDINGS OF THE IEEE, 1969, 57 (01) :25-&

[9] RAPID ZINC DIFFUSION IN GALLIUM ARSENIDE [J].

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[10]

PAOLI TL, TO BE PUBLISHED

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