DEGRADATION MECHANISM OF (AL.GA) AS DOUBLE-HETEROSTRUCTURE LASER-DIODES

被引:84
作者
YONEZU, H [1 ]
SAKUMA, I [1 ]
KAMEJIMA, T [1 ]
UENO, M [1 ]
NISHIDA, K [1 ]
NANNICHI, Y [1 ]
HAYASHI, I [1 ]
机构
[1] NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN
关键词
D O I
10.1063/1.1654991
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:18 / 19
页数:2
相关论文
共 7 条
[1]  
BIARD JR, 1968, P INT S GAAS
[2]   THERMAL EXPANSION OF ALAS [J].
ETTENBERG, M ;
PAFF, RJ .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :3926-+
[3]  
NEWMAN DH, 1972, IEEE J QUANTUM ELECT, VQE 8, P379
[4]  
SAKUMA I, UNPUBLISHED
[5]  
YONEZU H, TO BE PUBLISHED
[6]   OPTICAL OBSERVATION OF MISMATCH DISLOCATIONS IN GAAS LUMINESCENT DIODES [J].
ZSCHAUER, KH .
SOLID STATE COMMUNICATIONS, 1969, 7 (02) :335-&
[7]  
1973, 20 APPL PHYS M 1, P248