OPTICAL OBSERVATION OF MISMATCH DISLOCATIONS IN GAAS LUMINESCENT DIODES

被引：16

作者：

ZSCHAUER, KH

机构：

[1] Forschungslaboratorium der Siemens AG, München

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 02期

关键词：

D O I：

10.1016/0038-1098(69)90414-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A cross-grid of dark lines has been observed in the light-emitting region of GaAs luminescent diodes prepared by alloying a SnZn alloy into (100) oriented n-type wafers. The dark lines correspond to an additional recombination at dislocations which are believed to arise as a consequence of the lattice mismatch between substrate and recrystallized region. © 1969.

引用

页码：335 / &

共 9 条

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[9] PROPERTIES OF LUMINESCENT GAAS P-N JUNCTIONS WITH ALLOYED P-REGION
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[J]. SOLID STATE COMMUNICATIONS, 1967, 5 (02) : 123 - +

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