PROPERTIES OF LUMINESCENT GAAS P-N JUNCTIONS WITH ALLOYED P-REGION

[1] CHARACTERISTICS OF A GAAS SPONTANEOUS INFRARED SOURCE WITH 40 PERCENT EFFICIENCY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (10) : 531 - &

[2] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS [J]. PHYSICAL REVIEW, 1966, 148 (02): : 722 - +

[3] OPTICAL PROPERTIES OF GAAS ALLOYED P-N JUNCTIONS [J]. SOLID STATE COMMUNICATIONS, 1967, 5 (02) : 127 - +

[4] LUMINESCENCE AND RECOMBINATION THROUGH DEFECTS IN P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1965, 139 (1A): : A294 - &

[5] RECOMBINATION RADIATION IN GAAS BY OPTICAL AND ELECTRICAL INJECTION [J]. APPLIED PHYSICS LETTERS, 1962, 1 (04) : 89 - 90

[6] PRENER JS, 1956, J CHEM PHYS, V25, P1924

[7] PROPERTIES OF GAAS ALLOY DIODES [J]. SOLID-STATE ELECTRONICS, 1963, 6 (06) : 657 - 665

[8] 1966, IEEE SOLIDSTATE DEVI

[1] CHARACTERISTICS OF A GAAS SPONTANEOUS INFRARED SOURCE WITH 40 PERCENT EFFICIENCY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (10) : 531 - &

[2] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS [J]. PHYSICAL REVIEW, 1966, 148 (02): : 722 - +

[3] OPTICAL PROPERTIES OF GAAS ALLOYED P-N JUNCTIONS [J]. SOLID STATE COMMUNICATIONS, 1967, 5 (02) : 127 - +

[4] LUMINESCENCE AND RECOMBINATION THROUGH DEFECTS IN P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1965, 139 (1A): : A294 - &

[5] RECOMBINATION RADIATION IN GAAS BY OPTICAL AND ELECTRICAL INJECTION [J]. APPLIED PHYSICS LETTERS, 1962, 1 (04) : 89 - 90

[6] PRENER JS, 1956, J CHEM PHYS, V25, P1924

[7] PROPERTIES OF GAAS ALLOY DIODES [J]. SOLID-STATE ELECTRONICS, 1963, 6 (06) : 657 - 665

[8] 1966, IEEE SOLIDSTATE DEVI