CHARACTERISTICS OF A GAAS SPONTANEOUS INFRARED SOURCE WITH 40 PERCENT EFFICIENCY

被引：42

作者：

CARR, WN

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1965年 / ED12卷 / 10期

关键词：

D O I：

10.1109/T-ED.1965.15604

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：531 / &

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共 10 条

[1] BIARD JR, 1964, JUL SOL DEV RES C BO
[2] BIARD JR, 1964, IEEE T ELECTRON DEVI, VED11, P537
[3] ONE-WATT GAAS P-N JUNCTION INFRARED SOURCE
CARR, WN
PITTMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1963, 3 (10) : 173 - 175
[4] QUANTUM EFFICIENCY OF NEW GAAS SPONTANEOUS INFRARED SOURCE
CARR, WN
PITTMAN, GE
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (02) : 204 - &
[5] OPTICAL GENERATION SPECTRUM FOR ELECTRON THERMAL-INJECTION MECHANISM IN GAAS DIODES
CARR, WN
BIARD, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2777 - &
[6] COMMON OCCURENCE OF ARTIFACTS OR GHOST PEAKS IN SEMICONDUCTOR INJECTION ELECTROLUMINESCENCE SPECTRA
CARR, WN
BIARD, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2776 - &
[7] CARR WN, UNPUBLISHED DATA
[8] THE EFFECT OF CU IMPURITIES ON INFRARED ELECTROLUMINESCENCE IN GAAS P-N JUNCTIONS
LARSEN, TL
[J]. APPLIED PHYSICS LETTERS, 1963, 3 (07) : 113 - 115
[9] PILKUHN M, 1964, JUL SOL DEV RES C BO
[10] PILKUHN M, 1964, IEEE T ELECTRON DEVI, VED11, P537