THE EFFECT OF CU IMPURITIES ON INFRARED ELECTROLUMINESCENCE IN GAAS P-N JUNCTIONS

被引：19

作者：

LARSEN, TL

机构：

来源：

APPLIED PHYSICS LETTERS | 1963年 / 3卷 / 07期

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D O I：

10.1063/1.1753892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：113 / 115

页数：3

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