PROPERTIES OF GAAS ALLOY DIODES

[1] BETHE HA, 1942, NDRC4312 US DEP COMM

[2] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J]. PHYSICAL REVIEW, 1961, 121 (03): : 684 - &

[3] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[4] FRANZ W, 1956, HDB PHYSIK, V17, P155

[5] ELECTROLUMINESCENCE AT P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) : 1338 - &

[6] HALPERN J, 1960, P IRE, V48, P1780

[7] A GALLIUM ARSENIDE MICROWAVE DIODE [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (04): : 717 - 722

[8] KEYES RJ, 1962, P IRE, V50, P1822

[9] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11): : 1535 - 1537

[10] ABSORPTION EDGE IN DEGENERATE PARA TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (03) : 771 - &

[1] BETHE HA, 1942, NDRC4312 US DEP COMM

[2] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J]. PHYSICAL REVIEW, 1961, 121 (03): : 684 - &

[3] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[4] FRANZ W, 1956, HDB PHYSIK, V17, P155

[5] ELECTROLUMINESCENCE AT P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) : 1338 - &

[6] HALPERN J, 1960, P IRE, V48, P1780

[7] A GALLIUM ARSENIDE MICROWAVE DIODE [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (04): : 717 - 722

[8] KEYES RJ, 1962, P IRE, V50, P1822

[9] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11): : 1535 - 1537

[10] ABSORPTION EDGE IN DEGENERATE PARA TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (03) : 771 - &