共 10 条
- [1] BROOKS H, 1951, PHYS REV, V83, P879
- [2] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390
- [3] SURFACE LEAKAGE CURRENT IN SILICON FUSED JUNCTION DIODES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (01): : 39 - 43
- [4] HERSTELLUNG UND ELEKTRISCHE EIGENSCHAFTEN VON INP UND GAAS [J]. ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1955, 10 (08): : 615 - 619
- [5] THEORY AND OPERATION OF CRYSTAL DIODES AS MIXERS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1269 - 1283
- [6] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35
- [7] DRIFT MOBILITIES IN SEMICONDUCTORS .2. SILICON [J]. PHYSICAL REVIEW, 1954, 93 (06): : 1204 - 1206
- [8] DRIFT MOBILITIES IN SEMICONDUCTORS .1. GERMANIUM [J]. PHYSICAL REVIEW, 1953, 92 (03): : 681 - 687
- [9] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
- [10] Torrey H.C., 1948, CRYSTAL RECTIFIERS