ENERGY-DEPENDENCE OF PHOTOELECTRON ATTENUATION LENGTH VIA OXIDATION OF SILICON

被引：12

作者：

MCGOVERN, IT

PARKE, AW

WILLIAMS, RH

机构：

[1] The New University of Ulster, Coleraine

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 26卷 / 01期

关键词：

D O I：

10.1016/0038-1098(78)90999-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The energy dependence of electron attenuation length in the range 20-60 eV has been determined through synchrotron radiation photoemission spectroscopy of the 2p core states in oxidised silicon (111) surfaces. The attenuation length is found to be approximately constant in this energy. © 1978.

引用

页码：21 / 23

页数：3

共 8 条

[1] PHOTOEMISSION STUDIES OF SURFACE-STATES AND OXIDATION OF GROUP-IV SEMICONDUCTORS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 372 - 375
[2] PROPERTIES OF OXIDIZED SILICON AS DETERMINED BY ANGULAR-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY
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[J]. CHEMICAL PHYSICS LETTERS, 1976, 44 (02) : 225 - 231
[3] ELECTRON-BEAM INDUCED EFFECTS ON GAS ADSORPTION UTILIZING AUGER-ELECTRON SPECTROSCOPY - CO AND O2 ON SI .1. ADSORPTION STUDIES
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[4] DETERMINATION OF ESCAPE DEPTH OF PHOTOEMITTED ELECTRONS IN GOLD IN ENERGY-RANGE 25-75 EV BY USE OF SYNCHROTRON RADIATION
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[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1976, 8 (06) : 487 - 491
[5] MCGOVERN IT, UNPUBLISHED
[6] ENERGY-DEPENDENCE OF ELECTRON INELASTIC-SCATTERING MEAN-FREE-PATH IN GOLD
NORMAN, D
WOODRUFF, DP
[J]. SOLID STATE COMMUNICATIONS, 1977, 22 (11) : 711 - 713
[7] ATTENUATION LENGTHS OF LOW-ENERGY ELECTRONS IN SOLIDS
POWELL, CJ
[J]. SURFACE SCIENCE, 1974, 44 (01) : 29 - 46
[8] PHOTOEMISSION STUDY OF EFFECT OF BULK DOPING AND OXYGEN EXPOSURE ON SILICON SURFACE STATES
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SPICER, WE
[J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1512 - 1515

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