PHOTOEMISSION STUDY OF EFFECT OF BULK DOPING AND OXYGEN EXPOSURE ON SILICON SURFACE STATES

被引：82

作者：

WAGNER, LF ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.9.1512

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1512 / 1515

页数：4

共 13 条

[1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].

ALLEN, FG ;

GOBELI, GW .

PHYSICAL REVIEW, 1962, 127 (01) :150-&

[2] MEASUREMENT OF OXYGEN ADSORPTION ON SILICON BYELLIPSOMETRY [J].

ARCHER, RJ ;

GOBELI, GW .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (02) :343-&

[3] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].

BRODSKY, MH ;

TITLE, RS ;

WEISER, K ;

PETTIT, GD .

PHYSICAL REVIEW B, 1970, 1 (06) :2632-&

[4]

DEWITT JG, 1971, 2ND P INT C ION IMPL, P39

[5] BND EDGE OF AMORPHOUS SIO2 BY PHOTOINJECTION AND PHOTOCONDUCTIVITY MEASUREMENTS [J].

DISTEFANO, TH ;

EASTMAN, DE .

SOLID STATE COMMUNICATIONS, 1971, 9 (24) :2259-+

[6] PHOTOEMISSION MEASUREMENTS OF VALENCE LEVELS OF AMORPHOUS SIO2 [J].

DISTEFANO, TH ;

EASTMAN, DE .

PHYSICAL REVIEW LETTERS, 1971, 27 (23) :1560-+

[7] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].

EASTMAN, DE ;

GROBMAN, WD .

PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1378-&

[8] ELECTRON PARAMAGNETIC RESONANCE FROM CLEAN SINGLE-CRYSTAL CLEAVAGE SURFACES OF SILICON [J].

HANEMAN, D .

PHYSICAL REVIEW, 1968, 170 (03) :705-&

[9] ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1. [J].

IBACH, H ;

HORN, K ;

DORN, R ;

LUTH, H .

SURFACE SCIENCE, 1973, 38 (02) :433-454

[10] STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES [J].

LANDER, JJ ;

GOBELL, GW ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2298-+

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