ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1.

被引：259

作者：

IBACH, H ^{[1
]}

HORN, K ^{[1
]}

DORN, R ^{[1
]}

LUTH, H ^{[1
]}

机构：

[1] RHEIN WESTFAL TH,PHYS INST 2,AACHEN,WEST GERMANY

来源：

关键词：

D O I：

10.1016/0039-6028(73)90171-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：433 / 454

页数：22

共 42 条

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[2] AUER PP, PRIVATE COMMUNICATIO
[3] BAUERLE F, 1972, J APPL PHYS, V43, P3917
[4] BENNINGHOVEN A, TO BE PUBLISHED
[5] BOONSTRA AH, 1968, PHILIPS RES REPT S3
[6] OXYGEN STICKING COEFFICIENTS ON CLEAN (111) SILICON SURFACES
CAROSELLA, CA
COMAS, J
[J]. SURFACE SCIENCE, 1969, 15 (02) : 303 - +
[7] DAVISON SG, SOLID STATE PHYSICS, V25
[8] DORN R, TO BE PUBLISHED
[9] RESONANCE SCATTERING OF SLOW ELECTRONS FROM H2 AND CO ANGULAR DISTRIBUTIONS
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TAYLOR, HS
[J]. PHYSICAL REVIEW, 1968, 173 (01): : 222 - &
[10] ADSORPTION OF OXYGEN ON SILICON
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LAW, JT
[J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (02) : 410 - 412