DEVELOPMENTS IN SILICON CARBIDE RESEARCH

[1] SILICON CARBIDE OF 594 LAYERS [J]. ACTA CRYSTALLOGRAPHICA, 1950, 3 (05): : 396 - &

[2] LUNDQVIST D, 1948, ACTA CHEM SCAND, V2, P177

[3] RAMSDELL LS, 1947, AM MINERAL, V32, P64

[4] DISAGREEMENT BETWEEN CRYSTAL SYMMETRY AND X-RAY DIFFRACTION DATA AS SHOWN BY A NEW TYPE OF SILICON CARBIDE, 10H [J]. ACTA CRYSTALLOGRAPHICA, 1951, 4 (02): : 111 - 113

[5] Thibault NW, 1944, AM MINERAL, V29, P327

[6] Thibault NW, 1944, AM MINERAL, V29, P249

[7] ZHDANOV GS, 1947, J EXP THEOR PHYS, V17, P3

[1] SILICON CARBIDE OF 594 LAYERS [J]. ACTA CRYSTALLOGRAPHICA, 1950, 3 (05): : 396 - &

[2] LUNDQVIST D, 1948, ACTA CHEM SCAND, V2, P177

[3] RAMSDELL LS, 1947, AM MINERAL, V32, P64

[4] DISAGREEMENT BETWEEN CRYSTAL SYMMETRY AND X-RAY DIFFRACTION DATA AS SHOWN BY A NEW TYPE OF SILICON CARBIDE, 10H [J]. ACTA CRYSTALLOGRAPHICA, 1951, 4 (02): : 111 - 113

[5] Thibault NW, 1944, AM MINERAL, V29, P327

[6] Thibault NW, 1944, AM MINERAL, V29, P249

[7] ZHDANOV GS, 1947, J EXP THEOR PHYS, V17, P3