ADVANTAGES OF MOTT BARRIER MIXER DIODES

被引：13

作者：

MCCOLL, M ^{[1
]}

MILLEA, MF ^{[1
]}

机构：

[1] AEROSP CORP,ELECTR RES LAB,EL SEGUNDO,CA 90245

来源：

关键词：

D O I：

10.1109/PROC.1973.9092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：499 / 500

页数：2

共 8 条

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[2] MESSENGER GC, 1957, IRE T MICROWAVE THEO, VMTT5, P62
[3] The theory of crystal rectifiers
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[4] Semi-conductor theory in barrier layers.
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[J]. NATURWISSENSCHAFTEN, 1938, 26 : 843 - 843
[5] PHOTORESPONSE CHARACTERISTICS OF EXTENDED SURFACE-BARRIER DIODES
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[J]. APPLIED PHYSICS LETTERS, 1971, 18 (10) : 422 - &
[6] SZE SM, 1969, PHYSICS SEMICONDUCTO, P414
[7] TORREY HC, 1948, CRYSTAL RECTIFIERS, V15, P90
[8] MILLIMETER FREQUENCY CONVERSION USING AU-N-TYPE GAAS SCHOTTKY BARRIER EPITAXIAL DIODES WITH A NOVEL CONTACTING TECHNIQUE
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IRVIN, JC
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12): : 2130 - &