MILLIMETER FREQUENCY CONVERSION USING AU-N-TYPE GAAS SCHOTTKY BARRIER EPITAXIAL DIODES WITH A NOVEL CONTACTING TECHNIQUE

被引：61

作者：

YOUNG, DT

IRVIN, JC

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 12期

关键词：

D O I：

10.1109/PROC.1965.4511

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2130 / &

共 8 条

[1] DELOACH BC, 1964, IEEE T MICROW THEORY, VMT12, P15
[2] DIETRICH AF, 1964, IEEE T MICROWAVE THE, VMT12, P316
[3] Friis H. T., 1944, PROC IRE, V32, P419, DOI [10.1109/JRPROC.1944.232049, DOI 10.1109/JRPROC.1944.232049]
[4] AU-N-TYPE GAAS SCHOTTKY BARRIER + ITS VARACTOR APPLICATION
KAHNG, D
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1964, 43 (1P1): : 215 - +
[5] HIGH-FREQUENCY GALLIUM ARSENIDE POINT-CONTACT RECTIFIERS
SHARPLESS, WM
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (01): : 259 - 269
[6] SHARPLESS WM, 1954, IRE T MICROWAVE THEO, VMTT2, P45
[7] SHARPLESS WM, 1961, IRE T MICROWAVE THEO, VMTT9, P6
[8] SOUTHWORTH GC, 1950, PRINCIPLES APPLICATI, P636