EFFECT OF BRIGHTENER CONCENTRATION ON THE THERMAL DISTORTION OF GOLD PLATED X-RAY MASKS

被引:3
作者
DAUKSHER, WJ
RESNICK, DJ
SEESE, PA
CUMMINGS, KD
YANOF, AW
JOHNSON, WA
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期
关键词
D O I
10.1116/1.587416
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:3990 / 3994
页数:5
相关论文
共 11 条
  • [1] ANNEALING BEHAVIOR OF GOLD ABSORBER IN X-RAY MASKS
    ACOSTA, RE
    JOHNSON, WA
    BERRY, BS
    PRITCHET, WC
    [J]. MICROELECTRONIC ENGINEERING, 1992, 17 (1-4) : 189 - 192
  • [2] ACOSTA RE, 1993, MATER RES SOC SYMP P, V306, P265, DOI 10.1557/PROC-306-265
  • [3] A NEW OPERATING REGIME FOR ELECTROPLATING THE GOLD ABSORBER ON X-RAY MASKS
    DAUKSHER, WJ
    RESNICK, DJ
    JOHNSON, WA
    YANOF, AW
    [J]. MICROELECTRONIC ENGINEERING, 1994, 23 (1-4) : 235 - 238
  • [4] STRESS REDUCTION OF GOLD ABSORBER PATTERNS ON X-RAY MASKS
    JOHNSON, WA
    ACOSTA, RE
    BERRY, BS
    PRITCHET, WC
    RESNICK, DJ
    DAUKSHER, WJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 3155 - 3158
  • [5] EFFECT OF THERMAL-TREATMENT ON THE MECHANICAL AND STRUCTURAL-PROPERTIES OF GOLD THIN-FILMS
    MALEK, CK
    KEBABI, B
    CHARAI, A
    DELAHOUSSAYE, P
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 3329 - 3332
  • [6] FABRICATION AND CHARACTERIZATION OF HIGH-FLATNESS MESA-ETCHED SILICON-NITRIDE X-RAY MASKS
    MOEL, A
    CHU, W
    EARLY, K
    KU, YC
    MOON, EE
    TSAI, F
    SMITH, HI
    SCHATTENBURG, ML
    FUNG, CD
    GRIFFITH, FW
    HAAS, LE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 3287 - 3291
  • [7] X-RAY MASK PROCESS-INDUCED DISTORTION STUDY
    NASH, SC
    FAURE, TB
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 3324 - 3328
  • [8] SEESE PA, 1993, P SOC PHOTO-OPT INS, V1924, P457, DOI 10.1117/12.146527
  • [9] TEMPERATURE-DEPENDENCE OF STRESSES IN ALUMINUM FILMS ON OXIDIZED SILICON SUBSTRATES
    SINHA, AK
    SHENG, TT
    [J]. THIN SOLID FILMS, 1978, 48 (01) : 117 - 126
  • [10] LOW-TEMPERATURE REACTIVE ION ETCHING AND MICROWAVE PLASMA-ETCHING OF SILICON
    TACHI, S
    TSUJIMOTO, K
    OKUDAIRA, S
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (08) : 616 - 618