RESISTANCE OF PLANAR BARRIERS

被引：22

作者：

LANDAUER, R

机构：

[1] IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.52.11225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The resistance of planar barriers is discussed for a variety of situations in which different sources of scattering act incoherently, allowing a semiclassical approach. This includes single barriers, a sequence of identical parallel barriers, and identical barriers at random angles simulating grain boundaries. Existing results are related, and only limited extension of these is provided. The case of a single barrier embedded in a uniformly resistive medium has been treated by Kunze and others. Kunze's analysis is validated and interpreted via a considerably simplified version of his model.

引用

页码：11225 / 11230

页数：6

共 26 条

[1] QUANTUM DELTA-DIMENSIONAL LANDAUER FORMULA [J].

AZBEL, MY .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (09) :L225-L230

[2]

Beenakker C. W. J., 1992, SOLID STATE PHYS, V44, P1

[3] MESOSCOPIC PHYSICS AND NANOELECTRONICS - NANOSCIENCE AND NANOTECHNOLOGY [J].

BUOT, FA .

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1993, 234 (2-3) :73-174

[4] GENERALIZED MANY-CHANNEL CONDUCTANCE FORMULA WITH APPLICATION TO SMALL RINGS [J].

BUTTIKER, M ;

IMRY, Y ;

LANDAUER, R ;

PINHAS, S .

PHYSICAL REVIEW B, 1985, 31 (10) :6207-6215

[5] VOLTAGE PROBES AND INELASTIC-SCATTERING [J].

DATTA, S ;

LAKE, RK .

PHYSICAL REVIEW B, 1991, 44 (12) :6538-6541

[6]

Datta S., 1995, ELECTRONIC TRANSPORT

[7] GENERALIZATION OF THE LANDAUER CONDUCTANCE FORMULA [J].

ERANEN, S ;

SINKKONEN, J .

PHYSICAL REVIEW B, 1987, 35 (05) :2222-2227

[8]

FEENSTRA R, IN PRESS J APPL PHYS

[9]

IMRY Y, IN PRESS INTRO MESOS

[10] SCANNING TUNNELING MEASUREMENTS OF POTENTIAL STEPS AT GRAIN-BOUNDARIES IN THE PRESENCE OF CURRENT FLOW [J].

KIRTLEY, JR ;

WASHBURN, S ;

BRADY, MJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1988, 32 (03) :414-418

← 1 2 3 →