INTERMETALLIC FORMATION IN GOLD-ALUMINUM SYSTEMS

[1] BERNSTEIN L, 1959, SEMICOND PROD, V34

[2] BLECH IA, 1966, J ELECTROCHEM SOC, V113, P1052

[3] BROWNING GV, 1964, PHYS FAILURE ELECT, V4, P428

[4] CHEN G, 1967, IEEE T PARTS MATER P, V3, P1949

[5] EXPANDED CONTACTS AND INTERCONNEXIONS TO MONOLITHIC SILICON INTEGRATED CIRCUITS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (09) : 735 - +

[6] HANSEN M, 1958, CONSTITUTION BINARY, P69

[7] SOME ASPECTS OF THE GROWTH OF DIFFUSION LAYERS IN BINARY SYSTEMS [J]. JOURNAL OF NUCLEAR MATERIALS, 1961, 3 (01) : 21 - 29

[8] RUGGERIO E, 1965, 4 P ANN MICR S

[9] SCHMIDT R, 1962, IRE T ELECTRON DEV, VED9, P506

[10] SCHNABLE GL, 1966, AF306023610 CONTR

[1] BERNSTEIN L, 1959, SEMICOND PROD, V34

[2] BLECH IA, 1966, J ELECTROCHEM SOC, V113, P1052

[3] BROWNING GV, 1964, PHYS FAILURE ELECT, V4, P428

[4] CHEN G, 1967, IEEE T PARTS MATER P, V3, P1949

[5] EXPANDED CONTACTS AND INTERCONNEXIONS TO MONOLITHIC SILICON INTEGRATED CIRCUITS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (09) : 735 - +

[6] HANSEN M, 1958, CONSTITUTION BINARY, P69

[7] SOME ASPECTS OF THE GROWTH OF DIFFUSION LAYERS IN BINARY SYSTEMS [J]. JOURNAL OF NUCLEAR MATERIALS, 1961, 3 (01) : 21 - 29

[8] RUGGERIO E, 1965, 4 P ANN MICR S

[9] SCHMIDT R, 1962, IRE T ELECTRON DEV, VED9, P506

[10] SCHNABLE GL, 1966, AF306023610 CONTR