FERMI EDGE SINGULARITY IN THE LUMINESCENCE OF MODULATION-DOPED GA0.47IN0.53AS/AL0.48IN0.52AS SINGLE HETEROJUNCTIONS

被引：30

作者：

ZHANG, YH

JIANG, DS

CINGOLANI, R

PLOOG, K

机构：

[1] Max-Planck-Institut für Festkörperforschung

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 22期

关键词：

D O I：

10.1063/1.102965

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Modulation-doped Ga0.47In0.53As/Al 0.48In0.52As single heterojunctions have been investigated by means of optical spectroscopy and magnetotransport measurements. Strong radiative recombination of the two-dimensional electron gas (2DEG) with photogenerated holes has been observed. The recombination is not k conserving, since the holes are weakly localized at the heterointerface opposite to the 2DEG region. At low temperature strong Fermi edge enhancement occurs in the luminescence of single heterojunctions with, for example, a dense electron sheet concentration of 2.5×1012 cm- 2. The results show clear evidence for the influence of carrier concentration and temperature on the Fermi edge singularity. The linewidths of the luminescence spectra agree well with those estimated from the electron sheet carrier concentrations, which were determined from the Shubnikov-de Haas oscillations, using an ideal 2DEG model.

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页码：2195 / 2197

页数：3

相关论文

共 15 条

[1] THE IMPACT OF EPITAXIAL LAYER DESIGN AND QUALITY ON GAINAS/ALINAS HIGH-ELECTRON-MOBILITY TRANSISTOR PERFORMANCE [J].

BROWN, AS ;

MISHRA, UK ;

HENIGE, JA ;

DELANEY, MJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :678-681

[2] SUBBAND-LANDAU LEVEL COUPLING IN A TWO-DIMENSIONAL ELECTRON-GAS IN TILTED MAGNETIC-FIELDS [J].

BRUMMELL, MA ;

HOPKINS, MA ;

NICHOLAS, RJ ;

PORTAL, JC ;

CHENG, KY ;

CHO, AY .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (05) :L107-L112

[3] RADIATIVE RECOMBINATION PROCESSES AND FERMI EDGE SINGULARITY IN MODULATION DOPED N-TYPE GAINAS ALINAS MULTIPLE QUANTUM-WELLS [J].

CINGOLANI, R ;

STOLZ, W ;

ZHANG, YH ;

PLOOG, K .

JOURNAL OF LUMINESCENCE, 1990, 46 (02) :147-154

[4] ELECTRONIC STATES AND OPTICAL-TRANSITIONS IN MODULATION-DOPED N-TYPE GAXIN1-XAS ALXIN1-XAS MULTIPLE QUANTUM WELLS [J].

CINGOLANI, R ;

STOLZ, W ;

PLOOG, K .

PHYSICAL REVIEW B, 1989, 40 (05) :2950-2955

[5] OPTICAL SPECTROSCOPY OF TWO-DIMENSIONAL ELECTRONS IN GAAS-ALXGA1-XAS SINGLE HETEROJUNCTIONS [J].

KUKUSHKIN, IV ;

VONKLITZING, K ;

PLOOG, K .

PHYSICAL REVIEW B, 1988, 37 (14) :8509-8512

[6] OBSERVATION OF THE FERMI EDGE ANOMALY IN THE ABSORPTION AND LUMINESCENCE SPECTRA OF N-TYPE MODULATION-DOPED GAAS-ALGAAS QUANTUM-WELLS [J].

LEE, JS ;

IWASA, Y ;

MIURA, N .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (10) :675-678

[7] FREE CARRIER AND MANY-BODY EFFECTS IN ABSORPTION-SPECTRA OF MODULATION-DOPED QUANTUM WELLS [J].

LIVESCU, G ;

MILLER, DAB ;

CHEMLA, DS ;

RAMASWAMY, M ;

CHANG, TY ;

SAUER, N ;

GOSSARD, AC ;

ENGLISH, JH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) :1677-1689

[8] OPTICAL INVESTIGATION OF MODULATION-DOPED IN0.53GA0.47AS/IN0.48AL0.52AS MULTIPLE QUANTUM WELL HETEROSTRUCTURES [J].

PENNA, AFS ;

SHAH, J ;

PINCZUK, A ;

SIVCO, D ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :184-186

[9]

ROTGER T, 1987, J PHYS-PARIS, V48, P389

[10] INFRARED AND POLARIZATION ANOMALIES IN THE OPTICAL-SPECTRA OF MODULATION-DOPED SEMICONDUCTOR QUANTUM-WELL STRUCTURES [J].

RUCKENSTEIN, AE ;

SCHMITTRINK, S ;

MILLER, RC .

PHYSICAL REVIEW LETTERS, 1986, 56 (05) :504-507