OPTICAL INVESTIGATION OF MODULATION-DOPED IN0.53GA0.47AS/IN0.48AL0.52AS MULTIPLE QUANTUM WELL HETEROSTRUCTURES

被引：24

作者：

PENNA, AFS ^{[1
]}

SHAH, J ^{[1
]}

PINCZUK, A ^{[1
]}

SIVCO, D ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 02期

关键词：

D O I：

10.1063/1.95677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：184 / 186

页数：3

共 9 条

[1] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY
CHENG, KY
CHO, AY
DRUMMOND, TJ
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 147 - 149
[2] TWO-DIMENSIONAL ELECTRON-GAS AT A MOLECULAR-BEAM EPITAXIAL-GROWN, SELECTIVELY DOPED, IN0.53GA0.47AS-IN0.48AL0.52AS INTERFACE
KASTALSKY, A
DINGLE, R
CHENG, KY
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 274 - 277
[3] OPTICAL STUDIES OF INXGA1-XAS-GAAS STRAINED MULTIQUANTUM WELL STRUCTURES
MARZIN, JY
RAO, EVK
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 560 - 562
[4] PEARSALL TP, 1982, GAINASP ALLOY SEMICO
[5] OPTICAL PROCESSES OF 2D ELECTRON-PLASMA IN GAAS-(ALGA) AS HETEROSTRUCTURES
PINCZUK, A
SHAH, J
MILLER, RC
GOSSARD, AC
WIEGMANN, W
[J]. SOLID STATE COMMUNICATIONS, 1984, 50 (08) : 735 - 739
[6] GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
RAZEGHI, M
HIRTZ, JP
ZIEMELIS, UO
DELALANDE, C
ETIENNE, B
VOOS, M
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 585 - 587
[7] 1.5-1.6-MU-M GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TEMKIN, H
ALAVI, K
WAGNER, WR
PEARSALL, TP
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 845 - 847
[8] LUMINESCENCE FROM INAS-GASB SUPER-LATTICES
VOISIN, P
BASTARD, G
DASILVA, CETG
VOOS, M
CHANG, LL
ESAKI, L
[J]. SOLID STATE COMMUNICATIONS, 1981, 39 (01) : 79 - 82
[9] OPTICAL-PROPERTIES OF GAINAS/ALLNAS SINGLE QUANTUM WELLS
WELCH, DF
WICKS, GW
EASTMAN, LF
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (08) : 762 - 764

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