GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：77

作者：

RAZEGHI, M ^{[1
]}

HIRTZ, JP ^{[1
]}

ZIEMELIS, UO ^{[1
]}

DELALANDE, C ^{[1
]}

ETIENNE, B ^{[1
]}

VOOS, M ^{[1
]}

机构：

[1] ECOLE NORMALE SUPER,PHYS SOLIDES GRP,CNRS LAB,F-75231 PARIS 05,FRANCE

来源：

关键词：

D O I：

10.1063/1.94408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：585 / 587

页数：3

共 11 条

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KIM, OK
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[4] TWO-DIMENSIONAL ELECTRON-GAS IN A IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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VIEREN, JP
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RAZEGHI, M
POISSON, MA
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 877 - 879
[5] HERSEE SD, 1982, ELECTRON LETT, V18, P896
[6] OPTICAL STUDIES OF IN0.53GA0.47AS
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BENCHIMOL, JL
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ETIENNE, B
VOOS, M
[J]. SOLID STATE COMMUNICATIONS, 1983, 45 (02) : 79 - 82
[7] Pearsall T. P., 1982, GaInAsP alloy semiconductors, P295
[8] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP AND RELATED-COMPOUNDS
RAZEGHI, M
POISSON, MA
LARIVAIN, JP
DUCHEMIN, JP
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) : 371 - 395
[9] RAZEGHI M, UNPUB J CRYST GROWTH
[10] RAZEGHI M, UNPUB J VAC SCI TECH