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NEAR-BAND-GAP ABSORPTION AND PHOTO-LUMINESCENCE OF IN0.53GA0.47AS SEMICONDUCTOR ALLOY
被引:41
作者
:
CHEN, YS
论文数:
0
引用数:
0
h-index:
0
CHEN, YS
KIM, OK
论文数:
0
引用数:
0
h-index:
0
KIM, OK
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1981年
/ 52卷
/ 12期
关键词
:
D O I
:
10.1063/1.328728
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:7392 / 7396
页数:5
相关论文
共 11 条
[1]
RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS
CUSANO, DA
论文数:
0
引用数:
0
h-index:
0
CUSANO, DA
[J].
SOLID STATE COMMUNICATIONS,
1964,
2
(11)
: 353
-
358
[2]
DEAN PJ, 1973, PROGR SOLID STATE CH, V8
[3]
RADIATIVE LIFETIMES OF DONOR-ACCEPTOR PAIRS IN P-TYPE GALLIUM ARSENIDE
DINGLE, R
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Murray Hill
DINGLE, R
[J].
PHYSICAL REVIEW,
1969,
184
(03):
: 788
-
&
[4]
DINGLE R, 1977, 1976 P C GALL ARS RE, P210
[5]
INTENSITY OF OPTICAL ABSORPTION BY EXCITONS
ELLIOTT, RJ
论文数:
0
引用数:
0
h-index:
0
ELLIOTT, RJ
[J].
PHYSICAL REVIEW,
1957,
108
(06):
: 1384
-
1389
[6]
SMALL AREA INGAAS-INP P-I-N PHOTO-DIODES - FABRICATION, CHARACTERISTICS AND PERFORMANCE OF DEVICES IN 274-MB-S AND 45-MB-S LIGHTWAVE RECEIVERS AT 1.31 MU-M WAVELENGTH
LEE, TP
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0
引用数:
0
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0
LEE, TP
BURRUS, CA
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BURRUS, CA
DENTAI, AG
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DENTAI, AG
OGAWA, K
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OGAWA, K
[J].
ELECTRONICS LETTERS,
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: 155
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156
[7]
LPE GROWTH OF MISFIT DISLOCATION-FREE THICK IN1-XGAXAS LAYERS ON INP
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KOMIYA, S
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AKITA, K
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AKITA, K
YAMAOKA, T
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YAMAOKA, T
RYUZAN, O
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0
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0
RYUZAN, O
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(07)
: 1568
-
1572
[8]
LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY LATTICE MATCHED GAXIN1-XAS ON LESS-THAN111 GREATER-THAN-B INP
OLIVER, JD
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OLIVER, JD
EASTMAN, LF
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EASTMAN, LF
[J].
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: 693
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712
[9]
HOT-CARRIER RELAXATION IN PHOTO-EXCITED IN-0.53 GA-0.47 AS
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SHAH, J
LEHENY, RF
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NAHORY, RE
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NAHORY, RE
POLLACK, MA
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0
引用数:
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POLLACK, MA
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(05)
: 475
-
477
[10]
ELECTRON-MOBILITY AND ENERGY-GAP OF IN0.53GA0.47AS ON INP SUBSTRATE
TAKEDA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
TAKEDA, Y
SASAKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
SASAKI, A
IMAMURA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
IMAMURA, Y
TAKAGI, T
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
TAKAGI, T
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(12)
: 5405
-
5408
←
1
2
→
共 11 条
[1]
RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS
CUSANO, DA
论文数:
0
引用数:
0
h-index:
0
CUSANO, DA
[J].
SOLID STATE COMMUNICATIONS,
1964,
2
(11)
: 353
-
358
[2]
DEAN PJ, 1973, PROGR SOLID STATE CH, V8
[3]
RADIATIVE LIFETIMES OF DONOR-ACCEPTOR PAIRS IN P-TYPE GALLIUM ARSENIDE
DINGLE, R
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Murray Hill
DINGLE, R
[J].
PHYSICAL REVIEW,
1969,
184
(03):
: 788
-
&
[4]
DINGLE R, 1977, 1976 P C GALL ARS RE, P210
[5]
INTENSITY OF OPTICAL ABSORPTION BY EXCITONS
ELLIOTT, RJ
论文数:
0
引用数:
0
h-index:
0
ELLIOTT, RJ
[J].
PHYSICAL REVIEW,
1957,
108
(06):
: 1384
-
1389
[6]
SMALL AREA INGAAS-INP P-I-N PHOTO-DIODES - FABRICATION, CHARACTERISTICS AND PERFORMANCE OF DEVICES IN 274-MB-S AND 45-MB-S LIGHTWAVE RECEIVERS AT 1.31 MU-M WAVELENGTH
LEE, TP
论文数:
0
引用数:
0
h-index:
0
LEE, TP
BURRUS, CA
论文数:
0
引用数:
0
h-index:
0
BURRUS, CA
DENTAI, AG
论文数:
0
引用数:
0
h-index:
0
DENTAI, AG
OGAWA, K
论文数:
0
引用数:
0
h-index:
0
OGAWA, K
[J].
ELECTRONICS LETTERS,
1980,
16
(04)
: 155
-
156
[7]
LPE GROWTH OF MISFIT DISLOCATION-FREE THICK IN1-XGAXAS LAYERS ON INP
NAKAJIMA, K
论文数:
0
引用数:
0
h-index:
0
NAKAJIMA, K
KOMIYA, S
论文数:
0
引用数:
0
h-index:
0
KOMIYA, S
AKITA, K
论文数:
0
引用数:
0
h-index:
0
AKITA, K
YAMAOKA, T
论文数:
0
引用数:
0
h-index:
0
YAMAOKA, T
RYUZAN, O
论文数:
0
引用数:
0
h-index:
0
RYUZAN, O
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(07)
: 1568
-
1572
[8]
LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY LATTICE MATCHED GAXIN1-XAS ON LESS-THAN111 GREATER-THAN-B INP
OLIVER, JD
论文数:
0
引用数:
0
h-index:
0
OLIVER, JD
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
EASTMAN, LF
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1980,
9
(04)
: 693
-
712
[9]
HOT-CARRIER RELAXATION IN PHOTO-EXCITED IN-0.53 GA-0.47 AS
SHAH, J
论文数:
0
引用数:
0
h-index:
0
SHAH, J
LEHENY, RF
论文数:
0
引用数:
0
h-index:
0
LEHENY, RF
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
NAHORY, RE
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
POLLACK, MA
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(05)
: 475
-
477
[10]
ELECTRON-MOBILITY AND ENERGY-GAP OF IN0.53GA0.47AS ON INP SUBSTRATE
TAKEDA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
TAKEDA, Y
SASAKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
SASAKI, A
IMAMURA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
IMAMURA, Y
TAKAGI, T
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
TAKAGI, T
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(12)
: 5405
-
5408
←
1
2
→