学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
ELECTRON-MOBILITY AND ENERGY-GAP OF IN0.53GA0.47AS ON INP SUBSTRATE
被引:79
作者
:
TAKEDA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
TAKEDA, Y
[
1
]
SASAKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
SASAKI, A
[
1
]
IMAMURA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
IMAMURA, Y
[
1
]
TAKAGI, T
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
TAKAGI, T
[
1
]
机构
:
[1]
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
来源
:
JOURNAL OF APPLIED PHYSICS
|
1976年
/ 47卷
/ 12期
关键词
:
D O I
:
10.1063/1.322570
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:5405 / 5408
页数:4
相关论文
共 23 条
[1]
ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
ABRAHAMS, MS
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
BUIOCCHI, CJ
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(09)
: 2855
-
&
[2]
GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(05)
: 683
-
687
[3]
MEASUREMENT OF ENERGY-BAND GAP USING AN ELECTROLYTE-SEMICONDUCTOR JUNCTION - WATER-GALLIUM INDIUM ARSENIDE ALLOYS
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BALIGA, BJ
BHAT, R
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BHAT, R
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(09)
: 3941
-
3945
[4]
TRANSMISSION PROPERTIES OF A LOW-LOSS NEAR-PARABOLIC-INDEX FIBER
COHEN, LG
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
COHEN, LG
KAISER, P
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
KAISER, P
MACCHESNEY, JB
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
MACCHESNEY, JB
OCONNOR, PB
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
OCONNOR, PB
PRESBY, HM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
PRESBY, HM
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(08)
: 472
-
474
[5]
PREPARATION OF EPITAXIAL GAXIN1-XAS
CONRAD, RW
论文数:
0
引用数:
0
h-index:
0
CONRAD, RW
HOYT, PL
论文数:
0
引用数:
0
h-index:
0
HOYT, PL
MARTIN, DD
论文数:
0
引用数:
0
h-index:
0
MARTIN, DD
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(2P1)
: 164
-
&
[6]
DZHAKHUTASHVLI TV, 1971, SOV PHYS SEMICOND+, V5, P190
[7]
ENSTROM RE, 1971, GALLIUM ARSENIDE REL, P30
[8]
OPTIMUM SEMICONDUCTOR FOR MICROWAVE DEVICES
FAWCETT, W
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Radar Establishment, Malvern Worcs.
FAWCETT, W
HILSUM, C
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Radar Establishment, Malvern Worcs.
HILSUM, C
REES, HD
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Radar Establishment, Malvern Worcs.
REES, HD
[J].
ELECTRONICS LETTERS,
1969,
5
(14)
: 313
-
&
[9]
ELECTRON-MOBILITY IN INXGA1-XAS ALLOYS
GLICKSMA.M
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
GLICKSMA.M
ENSTROM, RE
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
ENSTROM, RE
MITTLEMA.SA
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
MITTLEMA.SA
APPERT, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
APPERT, JR
[J].
PHYSICAL REVIEW B,
1974,
9
(04):
: 1621
-
1626
[10]
HALBOGARDUS E, 1968, PHYS REV, V176, P993
←
1
2
3
→
共 23 条
[1]
ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
ABRAHAMS, MS
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
BUIOCCHI, CJ
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(09)
: 2855
-
&
[2]
GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(05)
: 683
-
687
[3]
MEASUREMENT OF ENERGY-BAND GAP USING AN ELECTROLYTE-SEMICONDUCTOR JUNCTION - WATER-GALLIUM INDIUM ARSENIDE ALLOYS
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BALIGA, BJ
BHAT, R
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BHAT, R
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(09)
: 3941
-
3945
[4]
TRANSMISSION PROPERTIES OF A LOW-LOSS NEAR-PARABOLIC-INDEX FIBER
COHEN, LG
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
COHEN, LG
KAISER, P
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
KAISER, P
MACCHESNEY, JB
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
MACCHESNEY, JB
OCONNOR, PB
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
OCONNOR, PB
PRESBY, HM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
PRESBY, HM
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(08)
: 472
-
474
[5]
PREPARATION OF EPITAXIAL GAXIN1-XAS
CONRAD, RW
论文数:
0
引用数:
0
h-index:
0
CONRAD, RW
HOYT, PL
论文数:
0
引用数:
0
h-index:
0
HOYT, PL
MARTIN, DD
论文数:
0
引用数:
0
h-index:
0
MARTIN, DD
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(2P1)
: 164
-
&
[6]
DZHAKHUTASHVLI TV, 1971, SOV PHYS SEMICOND+, V5, P190
[7]
ENSTROM RE, 1971, GALLIUM ARSENIDE REL, P30
[8]
OPTIMUM SEMICONDUCTOR FOR MICROWAVE DEVICES
FAWCETT, W
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Radar Establishment, Malvern Worcs.
FAWCETT, W
HILSUM, C
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Radar Establishment, Malvern Worcs.
HILSUM, C
REES, HD
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Radar Establishment, Malvern Worcs.
REES, HD
[J].
ELECTRONICS LETTERS,
1969,
5
(14)
: 313
-
&
[9]
ELECTRON-MOBILITY IN INXGA1-XAS ALLOYS
GLICKSMA.M
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
GLICKSMA.M
ENSTROM, RE
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
ENSTROM, RE
MITTLEMA.SA
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
MITTLEMA.SA
APPERT, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
APPERT, JR
[J].
PHYSICAL REVIEW B,
1974,
9
(04):
: 1621
-
1626
[10]
HALBOGARDUS E, 1968, PHYS REV, V176, P993
←
1
2
3
→