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PREPARATION OF EPITAXIAL GAXIN1-XAS
被引:51
作者
:
CONRAD, RW
论文数:
0
引用数:
0
h-index:
0
CONRAD, RW
HOYT, PL
论文数:
0
引用数:
0
h-index:
0
HOYT, PL
MARTIN, DD
论文数:
0
引用数:
0
h-index:
0
MARTIN, DD
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1967年
/ 114卷
/ 2P1期
关键词
:
D O I
:
10.1149/1.2426530
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:164 / &
相关论文
共 12 条
[1]
THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
ABRAHAMS, MS
BRAUNSTEIN, R
论文数:
0
引用数:
0
h-index:
0
BRAUNSTEIN, R
ROSI, FD
论文数:
0
引用数:
0
h-index:
0
ROSI, FD
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1959,
10
(2-3)
: 204
-
210
[2]
THERMAL EXPANSION AND RELATED BONDING PROBLEMS OF SOME III-V COMPOUND SEMICONDUCTORS
BERNSTEIN, L
论文数:
0
引用数:
0
h-index:
0
BERNSTEIN, L
BEALS, RJ
论文数:
0
引用数:
0
h-index:
0
BEALS, RJ
[J].
JOURNAL OF APPLIED PHYSICS,
1961,
32
(01)
: 122
-
&
[3]
BROOKS H, UNPUBLISHED WORK
[4]
REFLECTIVITY STUDIES OF EPITAXIAL GAXIN1-X AS
CONRAD, RW
论文数:
0
引用数:
0
h-index:
0
CONRAD, RW
JONES, CE
论文数:
0
引用数:
0
h-index:
0
JONES, CE
WILLIAMS, EW
论文数:
0
引用数:
0
h-index:
0
WILLIAMS, EW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(03)
: 287
-
&
[5]
EPITAXIAL INAS ON SEMI-INSULATING GAAS SUBSTRATES
CRONIN, GR
论文数:
0
引用数:
0
h-index:
0
CRONIN, GR
CONRAD, RW
论文数:
0
引用数:
0
h-index:
0
CONRAD, RW
BORELLO, SR
论文数:
0
引用数:
0
h-index:
0
BORELLO, SR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(12)
: 1336
-
&
[6]
EPITAXIAL GROWTH OF GALLIUM ARSENIDE ON GERMANIUM SUBSTRATES .1. THE RELATIONSHIP BETWEEN FAULT FORMATION IN GALLIUM ARSENIDE FILMS AND THE SURFACE OF THEIR GERMANIUM SUBSTRATE
GABOR, T
论文数:
0
引用数:
0
h-index:
0
GABOR, T
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(07)
: 817
-
820
[7]
THERMAL AND ELECTRICAL TRANSPORT IN INAS-GAAS ALLOYS
HOCKINGS, EF
论文数:
0
引用数:
0
h-index:
0
HOCKINGS, EF
KUDMAN, I
论文数:
0
引用数:
0
h-index:
0
KUDMAN, I
SEIDEL, TE
论文数:
0
引用数:
0
h-index:
0
SEIDEL, TE
SCHMELZ, CM
论文数:
0
引用数:
0
h-index:
0
SCHMELZ, CM
STEIGMEIER, EF
论文数:
0
引用数:
0
h-index:
0
STEIGMEIER, EF
[J].
JOURNAL OF APPLIED PHYSICS,
1966,
37
(07)
: 2879
-
+
[8]
PREPARATION OF EPITAXIAL SEMI-INSULATING GALLIUM ARSENIDE BY IRON DOPING
HOYT, PL
论文数:
0
引用数:
0
h-index:
0
HOYT, PL
HAISTY, RW
论文数:
0
引用数:
0
h-index:
0
HAISTY, RW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(03)
: 296
-
&
[9]
PREPARATION AND PROPERTIES OF GAAS-INAS MIXED CRYSTALS
MINDEN, HT
论文数:
0
引用数:
0
h-index:
0
MINDEN, HT
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(03)
: 300
-
&
[10]
REISMAN A, 1966, J ELECTROCHEM SOC, V113, P296
←
1
2
→
共 12 条
[1]
THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
ABRAHAMS, MS
BRAUNSTEIN, R
论文数:
0
引用数:
0
h-index:
0
BRAUNSTEIN, R
ROSI, FD
论文数:
0
引用数:
0
h-index:
0
ROSI, FD
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1959,
10
(2-3)
: 204
-
210
[2]
THERMAL EXPANSION AND RELATED BONDING PROBLEMS OF SOME III-V COMPOUND SEMICONDUCTORS
BERNSTEIN, L
论文数:
0
引用数:
0
h-index:
0
BERNSTEIN, L
BEALS, RJ
论文数:
0
引用数:
0
h-index:
0
BEALS, RJ
[J].
JOURNAL OF APPLIED PHYSICS,
1961,
32
(01)
: 122
-
&
[3]
BROOKS H, UNPUBLISHED WORK
[4]
REFLECTIVITY STUDIES OF EPITAXIAL GAXIN1-X AS
CONRAD, RW
论文数:
0
引用数:
0
h-index:
0
CONRAD, RW
JONES, CE
论文数:
0
引用数:
0
h-index:
0
JONES, CE
WILLIAMS, EW
论文数:
0
引用数:
0
h-index:
0
WILLIAMS, EW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(03)
: 287
-
&
[5]
EPITAXIAL INAS ON SEMI-INSULATING GAAS SUBSTRATES
CRONIN, GR
论文数:
0
引用数:
0
h-index:
0
CRONIN, GR
CONRAD, RW
论文数:
0
引用数:
0
h-index:
0
CONRAD, RW
BORELLO, SR
论文数:
0
引用数:
0
h-index:
0
BORELLO, SR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(12)
: 1336
-
&
[6]
EPITAXIAL GROWTH OF GALLIUM ARSENIDE ON GERMANIUM SUBSTRATES .1. THE RELATIONSHIP BETWEEN FAULT FORMATION IN GALLIUM ARSENIDE FILMS AND THE SURFACE OF THEIR GERMANIUM SUBSTRATE
GABOR, T
论文数:
0
引用数:
0
h-index:
0
GABOR, T
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(07)
: 817
-
820
[7]
THERMAL AND ELECTRICAL TRANSPORT IN INAS-GAAS ALLOYS
HOCKINGS, EF
论文数:
0
引用数:
0
h-index:
0
HOCKINGS, EF
KUDMAN, I
论文数:
0
引用数:
0
h-index:
0
KUDMAN, I
SEIDEL, TE
论文数:
0
引用数:
0
h-index:
0
SEIDEL, TE
SCHMELZ, CM
论文数:
0
引用数:
0
h-index:
0
SCHMELZ, CM
STEIGMEIER, EF
论文数:
0
引用数:
0
h-index:
0
STEIGMEIER, EF
[J].
JOURNAL OF APPLIED PHYSICS,
1966,
37
(07)
: 2879
-
+
[8]
PREPARATION OF EPITAXIAL SEMI-INSULATING GALLIUM ARSENIDE BY IRON DOPING
HOYT, PL
论文数:
0
引用数:
0
h-index:
0
HOYT, PL
HAISTY, RW
论文数:
0
引用数:
0
h-index:
0
HAISTY, RW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(03)
: 296
-
&
[9]
PREPARATION AND PROPERTIES OF GAAS-INAS MIXED CRYSTALS
MINDEN, HT
论文数:
0
引用数:
0
h-index:
0
MINDEN, HT
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(03)
: 300
-
&
[10]
REISMAN A, 1966, J ELECTROCHEM SOC, V113, P296
←
1
2
→