TWO-DIMENSIONAL ELECTRON-GAS AT A MOLECULAR-BEAM EPITAXIAL-GROWN, SELECTIVELY DOPED, IN0.53GA0.47AS-IN0.48AL0.52AS INTERFACE

被引：80

作者：

KASTALSKY, A

DINGLE, R

CHENG, KY

CHO, AY

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 03期

关键词：

D O I：

10.1063/1.93499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：274 / 277

页数：4

共 9 条

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[5]

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[8] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE [J].

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[9] FAILURE OF MATTHIESSENS-RULE IN THE CALCULATION OF CARRIER MOBILITY AND ALLOY SCATTERING EFFECTS IN GA0.47IN0.53AS [J].

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