DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES

被引：83

作者：

DRUMMOND, TJ ^{[1
]}

MORKOC, H ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA

来源：

关键词：

D O I：

10.1063/1.329769

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1380 / 1386

页数：7

共 25 条

[1] SI AND GAAS 0.5 MUM-GATE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
BAECHTOLD, W
DAETWYLE.K
FORSTER, T
MOHR, TO
WALTER, W
WOLF, P
[J]. ELECTRONICS LETTERS, 1973, 9 (10) : 232 - 234
[2] Brooks H., 1955, ADV ELECTRON, V7, P85
[3] CAPIK RJ, 1974, TM74131212 BELL TEL
[4] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[5] FILM DEPOSITION BY MOLECULAR-BEAM TECHNIQUES
CHO, AY
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05): : S31 - &
[6] Darley H. M., 1978, 1978 International Electron Devices Meeting, P62, DOI 10.1109/IEDM.1978.189352
[7] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
DINGLE, R
STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[8] PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC
EDEN, RC
WELCH, BM
ZUCCA, R
LONG, SI
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 299 - 317
[9] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS
FANG, FF
FOWLER, AB
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +
[10] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS
MIMURA, T
HIYAMIZU, S
FUJII, T
NANBU, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227