HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS

[1] ELECTRON DRIFT VELOCITY IN AVALANCHING SILICON DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 46 - +

[2] NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (18) : 797 - &

[3] EFFECTS OF A TILTED MAGNETIC FIELD ON A 2-DIMENSIONAL ELECTRON GAS [J]. PHYSICAL REVIEW, 1968, 174 (03): : 823 - &

[4] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +

[5] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 901 - &

[6] FOWLER AB, 1966, J PHYS SOC JAPA S331, V21

[7] FOWLER AB, 1966, P INT C PHYS SEMICON

[8] GUERON M, 1959, J PHYS CHEM SOLIDS, V12, P433

[9] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[10] JORGENSEN MH, 1965, 1964 P INT C PHYS SE, P457

[1] ELECTRON DRIFT VELOCITY IN AVALANCHING SILICON DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 46 - +

[2] NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (18) : 797 - &

[3] EFFECTS OF A TILTED MAGNETIC FIELD ON A 2-DIMENSIONAL ELECTRON GAS [J]. PHYSICAL REVIEW, 1968, 174 (03): : 823 - &

[4] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +

[5] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 901 - &

[6] FOWLER AB, 1966, J PHYS SOC JAPA S331, V21

[7] FOWLER AB, 1966, P INT C PHYS SEMICON

[8] GUERON M, 1959, J PHYS CHEM SOLIDS, V12, P433

[9] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[10] JORGENSEN MH, 1965, 1964 P INT C PHYS SE, P457