ELECTRON DRIFT VELOCITY IN AVALANCHING SILICON DIODES

被引：82

作者：

DUH, CY

MOLL, JL

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 01期

关键词：

D O I：

10.1109/T-ED.1967.15895

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：46 / +

页数：1

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[9] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS [J].

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