THE FIELD-DEPENDENCE OF CARRIER MOBILITY IN SILICON AND GERMANIUM

[1] GUNN JB, 1956, J ELECTRONICS, V2, P87

[2] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769

[3] THE INFLUENCE OF INTERELECTRONIC COLLISIONS ON CONDUCTION AND BREAKDOWN IN COVALENT SEMI-CONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 242 (1230): : 355 - 373

[4] 1955, 6TH PRF1046 PURD DEP

[1] GUNN JB, 1956, J ELECTRONICS, V2, P87

[2] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769

[3] THE INFLUENCE OF INTERELECTRONIC COLLISIONS ON CONDUCTION AND BREAKDOWN IN COVALENT SEMI-CONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 242 (1230): : 355 - 373

[4] 1955, 6TH PRF1046 PURD DEP