FIELD-EFFECT CONDUCTANCE ACTIVATION-ENERGY IN AN UNDOPED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR

被引：34

作者：

DIMITRIADIS, CA ^{[1
]}

ECONOMOU, NA ^{[1
]}

COXON, PA ^{[1
]}

机构：

[1] GEC RES LABS, HIRST RES CTR, WEMBLEY HA9 7PP, MIDDX, ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 02期

关键词：

D O I：

10.1063/1.106010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the temperature dependence of the field-effect (FE) conductance of thin-film transistors on undoped polycrystalline silicon layers. The FE conductance is thermally activated at a fixed gate voltage. The conductance prefactor G0 increases exponentially with the FE activation energy E(a), in accordance with the Meyer-Neldel rule. Using these results, a model of exponentially decaying band tails explains the FE activation energy data. By fitting the FE activation energy data with the theory, we determine the trap distribution in polysilicon layers deposited at various pressures. The results indicate that the existence of band tails is not an intrinsic property of grain boundaries.

引用

页码：172 / 174

页数：3

共 15 条

[1] DIMITRIADIS CA, UNPUB
[2] SUBTHRESHOLD MODEL OF A POLYCRYSTALLINE SILICON THIN-FILM FIELD-EFFECT TRANSISTOR
FAUGHNAN, B
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (05) : 290 - 292
[3] DETERMINATION OF GAP STATE DENSITY IN POLYCRYSTALLINE SILICON BY FIELD-EFFECT CONDUCTANCE
FORTUNATO, G
MIGLIORATO, P
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1025 - 1027
[4] FOTUNATO G, 1988, PHILOS MAG B, V57, P573
[5] DENSITY OF GAP STATES OF SILICON GRAIN-BOUNDARIES DETERMINED BY OPTICAL-ABSORPTION
JACKSON, WB
JOHNSON, NM
BIEGELSEN, DK
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (02) : 195 - 197
[6] ACTIVATION-ENERGY OF SOURCE-DRAIN CURRENT IN HYDROGENATED AND UNHYDROGENATED POLYSILICON THIN-FILM TRANSISTORS
KHAN, BA
PANDYA, R
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (07) : 1727 - 1734
[7] STRUCTURAL STUDIES OF LOW-TEMPERATURE LOW-PRESSURE CHEMICAL DEPOSITED POLYCRYSTALLINE SILICON
MEAKIN, D
STOEMENOS, J
MIGLIORATO, P
ECONOMOU, NA
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) : 5031 - 5037
[8] LOW DEFECT-DENSITY POLYCRYSTALLINE SILICON FOR HIGH-PERFORMANCE THIN-FILM TRANSISTORS
MEAKIN, DB
ECONOMOU, NA
COXON, PA
STOEMENOS, J
LOWE, A
MIGLIORATO, P
[J]. APPLIED SURFACE SCIENCE, 1987, 30 (1-4) : 372 - 382
[9] HIGH-PERFORMANCE THIN-FILM TRANSISTORS FROM OPTIMIZED POLYCRYSTALLINE SILICON FILMS
MEAKIN, DB
COXON, PA
MIGLIORATO, P
STOEMENOS, J
ECONOMOU, NA
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (26) : 1894 - 1896
[10] Meyer W., 1937, Z TECHN PHYS, V18, P588

← 1 2 →