LOW DEFECT-DENSITY POLYCRYSTALLINE SILICON FOR HIGH-PERFORMANCE THIN-FILM TRANSISTORS

被引：9

作者：

MEAKIN, DB

ECONOMOU, NA

COXON, PA

STOEMENOS, J

LOWE, A

MIGLIORATO, P

机构：

来源：

APPLIED SURFACE SCIENCE | 1987年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(87)90114-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：372 / 382

页数：11

共 11 条

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[2]

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[3] ANOMALOUS LEAKAGE CURRENT IN LPCVD POLYSILICON MOSFETS [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1878-1884

[4] GROWTH AND PHYSICAL-PROPERTIES OF LPCVD POLYCRYSTALLINE SILICON FILMS [J].

HARBEKE, G ;

KRAUSBAUER, L ;

STEIGMEIER, EF ;

WIDMER, AE ;

KAPPERT, HF ;

NEUGEBAUER, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) :675-682

[5] HYDROGENATION OF TRANSISTORS FABRICATED IN POLYCRYSTALLINE-SILICON FILMS [J].

KAMINS, TI ;

MARCOUX .

ELECTRON DEVICE LETTERS, 1980, 1 (08) :159-161

[6] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON [J].

MALHI, SDS ;

SHICHIJO, H ;

BANERJEE, SK ;

SUNDARESAN, R ;

ELAHY, M ;

POLLACK, GP ;

RICHARDSON, WF ;

SHAH, AH ;

HITE, LR ;

WOMACK, RH ;

CHATTERJEE, PK ;

LAM, HW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :258-281

[7] MATERIAL PROPERTIES AND CHARACTERISTICS OF POLYSILICON TRANSISTORS FOR LARGE AREA ELECTRONICS [J].

MIGLIORATO, P ;

MEAKIN, DB .

APPLIED SURFACE SCIENCE, 1987, 30 (1-4) :353-371

[8]

Morozumi S, 1984, SID 84 DIG, P316

[9]

Oana Y., 2014, JPN J APPL PHYS, V22, P493, DOI [10.7567/JJAPS.22S1.493, DOI 10.7567/JJAPS.22S1.493]

[10] CHARACTERIZATION OF POLYCRYSTALLINE SILICON MOS-TRANSISTORS AND ITS FILM PROPERTIES .1. [J].

ONGA, S ;

MIZUTANI, Y ;

TANIGUCHI, K ;

KASHIWAGI, M ;

SHIBATA, K ;

KOHYAMA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1982, 21 (10) :1472-1478

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