CHARACTERIZATION OF POLYCRYSTALLINE SILICON MOS-TRANSISTORS AND ITS FILM PROPERTIES .1.

被引：30

作者：

ONGA, S

MIZUTANI, Y

TANIGUCHI, K

KASHIWAGI, M

SHIBATA, K

KOHYAMA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1982年 / 21卷 / 10期

关键词：

D O I：

10.1143/JJAP.21.1472

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1472 / 1478

页数：7

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