SINGLE-CRYSTAL SILICON-ON-OXIDE BY A SCANNING CW LASER-INDUCED LATERAL SEEDING PROCESS

被引:70
作者
LAM, HW
PINIZZOTTO, RF
TASCH, AF
机构
关键词
D O I
10.1149/1.2127779
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1981 / 1986
页数:6
相关论文
共 20 条
  • [1] SINGLE CRYSTALS OF EXCEPTIONAL PERFECTION AND UNIFORMITY BY ZONE LEVELING
    BENNETT, DC
    SAWYER, B
    [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 637 - 660
  • [2] BIEGELSEN DK, 1980, LASER ELECTRON BEAM, P569
  • [3] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS
    GAT, A
    GIBBONS, JF
    [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 142 - 144
  • [4] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES
    GAT, A
    GERZBERG, L
    GIBBONS, JF
    MAGEE, TJ
    PENG, J
    HONG, JD
    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 775 - 778
  • [5] GELS MW, 1979, APPL PHYS LETT, V35, P71
  • [6] ONE-GATE-WIDE CMOS INVERTER ON LASER-RECRYSTALLIZED POLYSILICON
    GIBBONS, JF
    LEE, KF
    [J]. ELECTRON DEVICE LETTERS, 1980, 1 (06): : 117 - 118
  • [7] CW LASER RECRYSTALLIZATION OF (100) SI ON AMORPHOUS SUBSTRATES
    GIBBONS, JF
    LEE, KF
    MAGEE, TJ
    PENG, J
    ORMOND, R
    [J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 831 - 833
  • [8] MONOLITHIC INTEGRATED-CIRCUIT FABRICATED IN LASER-ANNEALED POLYSILICON
    KAMINS, TI
    LEE, KF
    GIBBONS, JF
    SARASWAT, KC
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 290 - 293
  • [9] CRYSTAL-STRUCTURE AND THERMAL-OXIDATION OF LASER-RECRYSTALIZED POLYCRYSTALLINE SILICON
    KAMINS, TI
    LEE, KF
    GIBBONS, JF
    [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 550 - 553
  • [10] MOSFETS IN LASER-RECRYSTALLIZED POLYSILICON ON QUARTZ
    KAMINS, TI
    PIANETTA, PA
    [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 214 - 216