MONOLITHIC INTEGRATED-CIRCUIT FABRICATED IN LASER-ANNEALED POLYSILICON

被引：37

作者：

KAMINS, TI ^{[1
]}

LEE, KF ^{[1
]}

GIBBONS, JF ^{[1
]}

SARASWAT, KC ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 01期

关键词：

D O I：

10.1109/T-ED.1980.19853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：290 / 293

页数：4

相关论文

共 8 条

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[5] CHARACTERISTICS OF SI-SIO2 INTERFACES BENEATH THIN SILICON FILMS DEFINED BY ELECTROCHEMICAL ETCHING
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[6] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON
LEE, KF
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[J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 173 - 175
[7] LEE KH, UNPUBLISHED
[8] PROPERTIES OF ESFI MOS-TRANSISTORS DUE TO FLOATING SUBSTRATE AND FINITE VOLUME
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1017 - 1023