FIELD-EFFECTS IN POLYCRYSTALLINE-SILICON FILMS

[1] CASS TR, PRIVATE COMMUNICATIO

[2] FA CH, 1966, IEEE T ELECTRON DEVI, VED13, P290

[3] SILICON GATE TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1125 - &

[4] Grove A. S., 1967, PHYS TECHNOL S

[5] GROVE AS, 1967, PHYS TECHNOL S, pCH9

[6] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4357 - &

[7] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) : 718 - 720

[8] MANOLIU J, PRIVATE COMMUNICATIO

[9] TEMPERATURE DEPENDENCE OF FIELD-EFFECT CONDUCTANCE IN THIN POLYCRYSTALLINE CDS FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (07) : 3177 - +

[10] SPADEA G, 1971, OCT IEEE INT EL DEV

[1] CASS TR, PRIVATE COMMUNICATIO

[2] FA CH, 1966, IEEE T ELECTRON DEVI, VED13, P290

[3] SILICON GATE TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1125 - &

[4] Grove A. S., 1967, PHYS TECHNOL S

[5] GROVE AS, 1967, PHYS TECHNOL S, pCH9

[6] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4357 - &

[7] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) : 718 - 720

[8] MANOLIU J, PRIVATE COMMUNICATIO

[9] TEMPERATURE DEPENDENCE OF FIELD-EFFECT CONDUCTANCE IN THIN POLYCRYSTALLINE CDS FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (07) : 3177 - +

[10] SPADEA G, 1971, OCT IEEE INT EL DEV