SILICON GATE TECHNOLOGY

[1] BALK P, 1965, MAY EL SOC SPR M

[2] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1873 - &

[3] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +

[4] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[5] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &

[6] GROVE AS, 1965, IEEE T ELECTRON DEV, VED12, P619

[7] ING SW, 1963, J ELECTROCHEM SOC, V10, P533

[8] CONTROLLED ETCHING OF SILICON IN THE HF-HNO3 SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) : 37 - 42

[9] METAL-NITRIDE-OXIDE-SILICON FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED GATES [J]. SOLID-STATE ELECTRONICS, 1968, 11 (07) : 653 - +

[10] VADASZ L, 1965, IEEE T ELECTRON DEVI, VED13, P459

[1] BALK P, 1965, MAY EL SOC SPR M

[2] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1873 - &

[3] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +

[4] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[5] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &

[6] GROVE AS, 1965, IEEE T ELECTRON DEV, VED12, P619

[7] ING SW, 1963, J ELECTROCHEM SOC, V10, P533

[8] CONTROLLED ETCHING OF SILICON IN THE HF-HNO3 SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) : 37 - 42

[9] METAL-NITRIDE-OXIDE-SILICON FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED GATES [J]. SOLID-STATE ELECTRONICS, 1968, 11 (07) : 653 - +

[10] VADASZ L, 1965, IEEE T ELECTRON DEVI, VED13, P459