CRYSTAL-STRUCTURE AND THERMAL-OXIDATION OF LASER-RECRYSTALIZED POLYCRYSTALLINE SILICON

被引：23

作者：

KAMINS, TI ^{[1
]}

LEE, KF ^{[1
]}

GIBBONS, JF ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 07期

关键词：

D O I：

10.1063/1.91576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：550 / 553

页数：4

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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 775 - 778
[2] OXIDATION OF PHOSPHORUS-DOPED LOW-PRESSURE AND ATMOSPHERIC-PRESSURE CVD POLYCRYSTALLINE-SILICON FILMS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) : 838 - 844
[3] MONOLITHIC INTEGRATED-CIRCUIT FABRICATED IN LASER-ANNEALED POLYSILICON
KAMINS, TI
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 290 - 293
[4] STRUCTURE AND STABILITY OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) : 927 - 932
[5] FIELD-EFFECTS IN POLYCRYSTALLINE-SILICON FILMS
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[J]. SOLID-STATE ELECTRONICS, 1972, 15 (07) : 789 - &
[6] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON
LEE, KF
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[J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 173 - 175