MATERIAL PROPERTIES AND CHARACTERISTICS OF POLYSILICON TRANSISTORS FOR LARGE AREA ELECTRONICS

[1] BACCARANI G, COMMUNICATION

[2] BRYER N, 1986, 6TH P INT DISPL RES, P80

[3] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112

[4] COHEN JD, 1984, SEMICONDUCTORS SEM C, V21, pCH2

[5] 1ST AND 2ND ORDER TWIN BOUNDARIES IN EDGE DEFINED FILM GROWTH-SILICON RIBBON [J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 237 - 239

[6] GRAIN-BOUNDARY STATES AND THE CHARACTERISTICS OF LATERAL POLYSILICON DIODES [J]. SOLID-STATE ELECTRONICS, 1982, 25 (01) : 67 - 71

[7] Depp S. W., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P297

[8] DETERMINATION OF GAP STATE DENSITY IN POLYCRYSTALLINE SILICON BY FIELD-EFFECT CONDUCTANCE [J]. APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1025 - 1027

[9] FORTUNATO G, IN PRESS PHIL MAG B

[10] FORTUNATO G, IN PRESS

[1] BACCARANI G, COMMUNICATION

[2] BRYER N, 1986, 6TH P INT DISPL RES, P80

[3] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112

[4] COHEN JD, 1984, SEMICONDUCTORS SEM C, V21, pCH2

[5] 1ST AND 2ND ORDER TWIN BOUNDARIES IN EDGE DEFINED FILM GROWTH-SILICON RIBBON [J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 237 - 239

[6] GRAIN-BOUNDARY STATES AND THE CHARACTERISTICS OF LATERAL POLYSILICON DIODES [J]. SOLID-STATE ELECTRONICS, 1982, 25 (01) : 67 - 71

[7] Depp S. W., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P297

[8] DETERMINATION OF GAP STATE DENSITY IN POLYCRYSTALLINE SILICON BY FIELD-EFFECT CONDUCTANCE [J]. APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1025 - 1027

[9] FORTUNATO G, IN PRESS PHIL MAG B

[10] FORTUNATO G, IN PRESS