GRAIN-BOUNDARY STATES AND THE CHARACTERISTICS OF LATERAL POLYSILICON DIODES

被引：89

作者：

DEGRAAFF, HC ^{[1
]}

HUYBERS, M ^{[1
]}

DEGROOT, JG ^{[1
]}

机构：

[1] PHILIPS RES LABS, SUNNYVALE, CA 94086 USA

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 01期

关键词：

D O I：

10.1016/0038-1101(82)90097-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：67 / 71

页数：5

共 20 条

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[4] ON THE TRANSPORT-THEORY OF SCHOTTKY BARRIERS TO POLYCRYSTALLINE SILICON THIN-FILMS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 700 - 705
[5] RICHARDSON CONSTANT AND TUNNELING EFFECTIVE MASS FOR THERMIONIC AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIER DIODES
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[J]. SOLID-STATE ELECTRONICS, 1969, 12 (01) : 55 - &
[6] DEGRAAFF HC, 1980, TECHNICAL DIGEST IED
[7] LATERAL POLYSILICON P-N DIODES
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1648 - 1651
[8] THEORY OF GRAIN-BOUNDARY AND INTRAGRAIN RECOMBINATION CURRENTS IN POLYSILICON P-N-JUNCTION SOLAR-CELLS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 692 - 700
[9] THEORY OF THE ELECTRICAL AND PHOTO-VOLTAIC PROPERTIES OF POLYCRYSTALLINE SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 446 - 454
[10] ENERGY-DISTRIBUTION OF TRAPPING STATES IN POLYCRYSTALLINE SILICON
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OSAKA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1043 - 1047

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