ENERGY-DISTRIBUTION OF TRAPPING STATES IN POLYCRYSTALLINE SILICON

[1] CHARACTERIZATION OF MULTIPLE DEEP LEVEL SYSTEMS IN SEMICONDUCTOR JUNCTIONS BY ADMITTANCE MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (02) : 203 - 214

[2] ELECTRONIC PROPERTIES OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 377 - 382

[3] HIROSE M, 1975, 5TH EUR SOL STAT DEV, P238

[4] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4357 - &

[5] CHEMICALLY VAPOR-DEPOSITED POLYCRYSTALLINE-SILICON FILMS [J]. IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1974, PH10 (04): : 221 - 229

[6] INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 221 - +

[7] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

[8] ZERO-BIAS RESISTANCE OF GRAIN-BOUNDARIES IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3879 - 3889

[9] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5247 - 5254

[10] TANIGUCHI M, UNPUBLISHED

[1] CHARACTERIZATION OF MULTIPLE DEEP LEVEL SYSTEMS IN SEMICONDUCTOR JUNCTIONS BY ADMITTANCE MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (02) : 203 - 214

[2] ELECTRONIC PROPERTIES OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 377 - 382

[3] HIROSE M, 1975, 5TH EUR SOL STAT DEV, P238

[4] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4357 - &

[5] CHEMICALLY VAPOR-DEPOSITED POLYCRYSTALLINE-SILICON FILMS [J]. IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1974, PH10 (04): : 221 - 229

[6] INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 221 - +

[7] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

[8] ZERO-BIAS RESISTANCE OF GRAIN-BOUNDARIES IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3879 - 3889

[9] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5247 - 5254

[10] TANIGUCHI M, UNPUBLISHED