ZERO-BIAS RESISTANCE OF GRAIN-BOUNDARIES IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON

被引：237

作者：

SEAGER, CH

CASTNER, TG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 07期

关键词：

D O I：

10.1063/1.325394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3879 / 3889

页数：11

共 22 条

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