POLYCRYSTALLINE SILICON SOLAR CELLS ON LOW-COST FOREIGN SUBSTRATES

[1] BLIEDEN HR, 1974, NSFRAN74013 NAT SCIE, P81

[2] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[3] LARGE AREA SILICON JUNCTIONS BY EPITAXIAL GROWTH TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (05) : 522 - &

[4] CHU TL, 1965, ELECTROCHIM ACTA, V10, P1141

[5] CHU TL, 1974, EL SOC EXT ABSTR, V74, P66

[6] THEORETICAL ANALYSIS OF SERIES RESISTANCE OF A SOLAR CELL [J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 765 - &

[7] HEAPS JD, 1961, IEEE T ELECTRON DEVI, V8, P560

[8] CHEMICAL VAPOR DEPOSITION OF SILICATE GLASSES FOR USE WITH SILICON DEVICES .1. DEPOSITION TECHNIQUES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 562 - &

[9] LIEN JC, 1973, THESIS U MISSOURI

[10] A SPREADING RESISTANCE TECHNIQUE FOR RESISTIVITY MEASUREMENTS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) : 255 - &

[1] BLIEDEN HR, 1974, NSFRAN74013 NAT SCIE, P81

[2] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[3] LARGE AREA SILICON JUNCTIONS BY EPITAXIAL GROWTH TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (05) : 522 - &

[4] CHU TL, 1965, ELECTROCHIM ACTA, V10, P1141

[5] CHU TL, 1974, EL SOC EXT ABSTR, V74, P66

[6] THEORETICAL ANALYSIS OF SERIES RESISTANCE OF A SOLAR CELL [J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 765 - &

[7] HEAPS JD, 1961, IEEE T ELECTRON DEVI, V8, P560

[8] CHEMICAL VAPOR DEPOSITION OF SILICATE GLASSES FOR USE WITH SILICON DEVICES .1. DEPOSITION TECHNIQUES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 562 - &

[9] LIEN JC, 1973, THESIS U MISSOURI

[10] A SPREADING RESISTANCE TECHNIQUE FOR RESISTIVITY MEASUREMENTS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) : 255 - &